Effect of AlN spacer layer thickness on the carrier scattering factors in InAlN/AlN/GaN heterostructures

Yuta Komori; Yasuki Kimura; Takuya Hoshii; Kiyotaka Miyano; Masayuki Tsukui; Ichirou Mizushima; Takashi Ida; Kuniyuki Kakushima; Hitoshi Wakabayashi; Kazuo Tsutsui

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[13a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

Mon. Sep 13, 2021 9:00 AM - 11:45 AM N305 (Oral)

Taketomo Sato(Hokkaido Univ.)

9:00 AM - 9:15 AM

[13a-N305-1] Effect of AlN spacer layer thickness on the carrier scattering factors in InAlN/AlN/GaN heterostructures

〇(M1)Yuta Komori¹, Yasuki Kimura¹, Takuya Hoshii¹, Kiyotaka Miyano², Masayuki Tsukui², Ichirou Mizushima², Takashi Ida², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.NuFlare Technology)

Keywords:InAlN/GaN, HEMT

InAlN/AlN/GaN構造におけるキャリア散乱要因について解析し、最適なAlN膜厚に関する知見を得る