[13a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[13a-N305-10] Transient temperature evaluation of GaN bonded on CC

〇Hiroto Saito¹, Aozora Fukui¹, Tomohiro Obata¹, Atsushi Tanaka², Tadatomo Suga³, Kai Takeuchi³ (1.Meikou Univ., 2.Nagoya Univ., 3.Meisei Univ.)

Keywords:semiconductor

In GaN devices, AuSn is widely used for bonding to the package. However, in addition to its low thermal conductivity, AuSn suffers from surface roughness caused by oxidation during the melting process, resulting in uneven thermal conduction. Therefore, a new method of bonding via TiAu was investigated. In this study, we measured the transient temperature of the specimens GaN and CC bonded via TiAu, and reported that the temperature increase caused by the TiAu part could not be confirmed.