[13a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[13a-N305-9] Study on Widening of Drift Region of GaN FinFETs
for Low On-Resistance and High Breakdown Voltage

〇Yusuke Hisatsune¹, Hoshii Takuya¹, Kakushima Kuniyuki¹, Wakabayashi Hitoshi¹, Tsutsui Kazuo¹ (1.Tokyo Tech)

Keywords:GaN, FinFET