[13a-N306-1~11] 17.1 カーボンナノチューブ，他のナノカーボン材料

▼ [13a-N306-6] High-Performance and low-voltage sense-amplifier using GAA-CNTFET with different chirality and channel

〇(D)Rohitkumar Singh¹、Pragya Sharma²、M. Aarthy²、Hidenori Mimura¹ (1.Shizuoka University、2.VIT Vellore)

キーワード：Voltage Sense amplifier, Nanotechnology, Carbon Nano-tube

This paper is a comprehensive description of GAA-CNTFET based Voltage sense amplifier (VSA) at a 10 nm technology node. Scaling down technology made researchers think about the alternative of traditional silicon transistors, so researchers tend their research towards nanotechnology. Among all the nano-devices CNTFET is a terrific alternative due to its noteworthy properties and manufacturing easiness. CNTFET allows making changes in the channel for fulfilling the global demands of small-sized and ultra-speed. By using the CNTFET’s extraordinary properties delay, power and PDP analysis have to be done by taking four different configurations like single chirality single channel (SCSC), single chirality dual channel (SCDC), Dual chirality single channel (DCSC), Dual chirality dual channel (DCDC).