[13a-N307-1~11] 17.3 Layered materials

△ [13a-N307-1] Strong breakdown strength of h-BN under fast voltage pulse stress results in the ultra-fast operation of 2D heterostructured memory devices

〇Taro Sasaki¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.Tokyo Univ., 2.Saitama Univ., 3.NIMS)

Keywords:2D materials, memory, fast operation