[13a-N307-1~11] 17.3 Layered materials

[13a-N307-5] Fabrication of FETs with Gate Dielectric by Oxidized Tantalum Disulfide

〇Hayate Takeuchi¹, Noriyuki Urakami^1,2, Yoshio Hashimoto^1,2 (1.Shinshu Univ., 2.Shinshu Univ. RISM)

Keywords:layered materials