The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

3 Optics and Photonics » 3.11 Photonic structures and phenomena

[13a-N321-1~10] 3.11 Photonic structures and phenomena

Mon. Sep 13, 2021 9:15 AM - 12:00 PM N321 (Oral)

Yasushi Takahashi(Osaka Pref. Univ.), Masato Takiguchi(NTT)

9:30 AM - 9:45 AM

[13a-N321-2] Improved Electrical Characteristics of CirD (Circular Defect in photonic crystal) lasers Structure by Ozone Cleaning

Shunsuke Miyazaki1, Rubing Zuo1, Hanqiao Ye1, Masato Morfuji1, Hirotake Kaji1, Akihiro Maruta1, Masahiko Kondow1 (1.Osaka Univ.)

Keywords:semiconductor, photonic crystal, laser

In previous our studies, We have not been able to achieve the target values of electrical properties in the samples fabricated, and we have not been able to confirm laser oscillation in optical measurements. The reason for the high electrical resistance is thought to be the presence of a resistive material at the interface between the top electrode and the substrate, which results in a large resistance value in a very small current injection region. Therefore, in this study, we considered the resistive material to be an organic substance and performed ozone cleaning just before the electrode fabrication process of the top surface device to evaluate the electrical and optical properties.