Structural changes of ZnO films on sapphire substrate by anneal at high temperatures

Keigou Maejima; Yuma Minamizono

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13a-S201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Sep 13, 2021 9:00 AM - 11:30 AM S201 (Oral)

Takumi Ikenoue(Kyoto Univ.), Kohei SHIMA(Tohoku Univ.)

9:30 AM - 9:45 AM

[13a-S201-3] Structural changes of ZnO films on sapphire substrate by anneal at high temperatures

〇Keigou Maejima¹, Yuma Minamizono¹ (1.Kagoshima Univ.)

Keywords:ZnO, anneal

During fabrication of zinc oxide film on sapphire substrate at high temperature, the reactions between zinc oxide and sapphire may occur. And it is known that zinc aluminate are formed by anneal at high temperature. In this study, structural changes of zinc oxide by anneal at high temperature are characterized.