[13a-S201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13a-S201-6] Impacts of hydrochloric acid and growth temperature on mist chemical vapor deposition growth of Ga₂O₃

〇Rie Yamada¹, Subaru Takahashi¹, Atsushi Sekiguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹ (1.Kogakuin Univ.)

Keywords:gallium oxide, mist CVD, hydrochloric acid

Ga₂O₃ thin films were grown for 1h on (0001) a-Al₂O₃ substrate by Mist CVD. Ga(C₅H₇O₂)₃ was first dissolved in deionized water to prepare a solution with precursor concentration of 0.05 mol/L, then 36% HCl was added so as to vary the HCl concentration from 0.10 mol/L to 0.47 mol/L. The growth temperatures were varied as 500°C, 550°C, and 600°C. As a result, It was confirmed that the grain size and the film thickness increased with increasing the HCl concentration. The grain size and the film thickness also increased with increasing the growth temperature. Therefore, it is suggested that HCl contributes to the surface migration.