The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13a-S201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Sep 13, 2021 9:00 AM - 11:30 AM S201 (Oral)

Takumi Ikenoue(Kyoto Univ.), Kohei SHIMA(Tohoku Univ.)

10:30 AM - 10:45 AM

[13a-S201-6] Impacts of hydrochloric acid and growth temperature on mist chemical vapor deposition growth of Ga2O3

Rie Yamada1, Subaru Takahashi1, Atsushi Sekiguchi1, Takeyoshi Onuma1, Tohru Honda1, Tomohiro Yamaguchi1 (1.Kogakuin Univ.)

Keywords:gallium oxide, mist CVD, hydrochloric acid

Ga2O3 thin films were grown for 1h on (0001) a-Al2O3 substrate by Mist CVD. Ga(C5H7O2)3 was first dissolved in deionized water to prepare a solution with precursor concentration of 0.05 mol/L, then 36% HCl was added so as to vary the HCl concentration from 0.10 mol/L to 0.47 mol/L. The growth temperatures were varied as 500°C, 550°C, and 600°C. As a result, It was confirmed that the grain size and the film thickness increased with increasing the HCl concentration. The grain size and the film thickness also increased with increasing the growth temperature. Therefore, it is suggested that HCl contributes to the surface migration.