Pit reduction of conductive AlInN / GaN DBR with AlGaN composition gradient layer

Kana Shibata; Yusuke Ueshima; Tetsuro Inagaki; Shintaro Ueda; Tsuyoshi Nagasawa; Minori Tanaka; Tetsuya Takeuchi; Satoshi Kamiyama; Motoaki Iwaya

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-N101-1~18] 15.4 III-V-group nitride crystals

Mon. Sep 13, 2021 1:00 PM - 6:00 PM N101 (Oral)

Masataka Imura(NIMS), Tomoyuki Tanikawa(Osaka Univ.), Shuhei Ichikawa(Osaka Univ.)

4:45 PM - 5:00 PM

△ [13p-N101-14] Pit reduction of conductive AlInN / GaN DBR with AlGaN composition gradient layer

〇Kana Shibata¹, Yusuke Ueshima¹, Tetsuro Inagaki¹, Shintaro Ueda¹, Tsuyoshi Nagasawa¹, Minori Tanaka¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ.)

Keywords:semiconductor

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