Growth of N-polar AlN using polarity inversion and pulse H<sub>2</sub> etching

Kazuya Ataka; Lu You; Wataru Matsumura; Kouki Hanasaku; Yongzhao Yao; Yukari Ishikawa; Yoshihiro Sugawara; Daisaku Yokoe; Satoshi Kurai; Narihito Okada; Yoichi Yamada; Kazuyuki Tadatomo

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-N101-1~18] 15.4 III-V-group nitride crystals

Mon. Sep 13, 2021 1:00 PM - 6:00 PM N101 (Oral)

Masataka Imura(NIMS), Tomoyuki Tanikawa(Osaka Univ.), Shuhei Ichikawa(Osaka Univ.)

3:15 PM - 3:30 PM

△ [13p-N101-9] Growth of N-polar AlN using polarity inversion and pulse H₂ etching

〇Kazuya Ataka¹, Lu You¹, Wataru Matsumura¹, Kouki Hanasaku¹, Yongzhao Yao², Yukari Ishikawa², Yoshihiro Sugawara², Daisaku Yokoe², Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ., 2.Japan Fine Ceramics Center)

Keywords:AlN, Crystal Growth

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Presentation information

[13p-N101-1~18] 15.4 III-V-group nitride crystals

△ [13p-N101-9] Growth of N-polar AlN using polarity inversion and pulse H2 etching

△ [13p-N101-9] Growth of N-polar AlN using polarity inversion and pulse H₂ etching