[13p-S201-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [13p-S201-10] Crystal Quality of VB-Grown β-Ga₂O₃ Investigated by High Resolution X-ray Diffraction

〇(M2)Muhidul Islam Chaman¹, Keigo Hoshikawa², Makoto Kasu¹ (1.SAGA UNIVERSITY, 2.SHINSHU UNIVERSITY)

Keywords:high resolution X-ray diffraction, crystal growth

Beta-Gallium Oxide (β-Ga₂O₃) is an ultra-wide band gap semiconductor material which has the bandgap energy of about 4.5 eV and breakdown electric field of about 8 MV/cm, which makes this material preferable for high-power electronic devices. Besides, large size single crystal β-Ga₂O₃ can be achieved from melt growth techniques that are economically beneficial for large-scale device fabrication. Vertical Bridgman (VB) is the preferred β-Ga₂O₃ bulk growth method. In this study, FWHM measured 14.04 and15.84 arcsec, respectively and therefore, VB shows slightly better crystallinity than EFG for this condition. FWHM for X-ray incident direction of [010] were 14.76 and 14.40 arcsec, respectively; that indicates EFG is slightly better than VB.