The 82nd JSAP Autumn Meeting 2021

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-S201-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Sep 13, 2021 1:00 PM - 4:45 PM S201 (Oral)

Takeyoshi Onuma(Kogakuin Univ.), Ken Goto(Tokyo Univ. Agri. and Tech.)

4:00 PM - 4:15 PM

[13p-S201-12] High aspect nano structure by Hydrogen environment anisotropic thermal etching of β-Ga2O3.

〇Yuki Yamazaki1, Kentaro Kinoshita1, Ryoto Konda1, Takeki Aikawa1, Tomoaki Monma1, Akihiko Kikuchi1,2,3 (1.Sophia Univ., 2.Sophia Photonics Research Center., 3.Sophia Semiconductor Research Institute.)

Keywords:oxide semiconductor