[13p-S201-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [13p-S201-5] Electrical Characteristics of n-Ga₂O₃/n-Si Heterojunction Formed by Surface-Activated Bonding

〇Zhenwei Wang¹, Daiki Takatsuki², Jianbo Liang², Naoteru Shigekawa², Masataka Higashiwaki¹ (1.NICT, 2.Osaka City Univ.)

Keywords:gallium oxide, heterojunction, surface-activated bonding

We fabricated an n-Ga₂O₃/n-Si heterojunction by surface-activated bonding through the use of an n-Ga₂O₃ (001) and an n-Si (100)-on-insulator substrates. Electrical test structures fabricated with the bonded sample showed rectifying current–voltage output characteristics, which were attributed to existence of charged defects/traps formed at the bonding interface. The built-in potential and the charge density at the interface were estimated.