[13p-S201-1~14] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▲ [13p-S201-5] Electrical Characteristics of n-Ga₂O₃/n-Si Heterojunction Formed by Surface-Activated Bonding

〇Zhenwei Wang¹、Daiki Takatsuki²、Jianbo Liang²、Naoteru Shigekawa²、Masataka Higashiwaki¹ (1.NICT、2.Osaka City Univ.)

キーワード：gallium oxide, heterojunction, surface-activated bonding

We fabricated an n-Ga₂O₃/n-Si heterojunction by surface-activated bonding through the use of an n-Ga₂O₃ (001) and an n-Si (100)-on-insulator substrates. Electrical test structures fabricated with the bonded sample showed rectifying current–voltage output characteristics, which were attributed to existence of charged defects/traps formed at the bonding interface. The built-in potential and the charge density at the interface were estimated.