[13p-S201-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-S201-8] Thermodynamic analysis of β-Ga₂O₃ growth by MOVPE and its experimental verification

〇Ken Goto¹, Nami Tanaka¹, Taro Nishimura¹, Kazutada Ikenaga^1,2, Masato Ishikawa³, Hideaki Machida³, Yoshinao Kumagai¹ (1.Tokyo Univ. of A & T, 2.TAIYO NIPPON SANSO, 3.Gas-Phase Growth)

Keywords:gallium oxide, MOVPE

Thermodynamic analysis and experimental demonstration of β-Ga₂O₃ growth by MOVPE using triethylgallium (TEG) and O₂ as precursors were performed.