13:30 〜 13:45
▲ [13p-S302-1] Two-dimensional Electronic State in a Ferromagnetic L10 MnGa Thin Film with Perpendicular Magnetization
キーワード:Perpendicular magnetization, Electronic state, Angle-resolved photoemission spectroscopy
Ferromagnetic thin films with perpendicular magnetization are key materials for high-density magnetic recording and other spintronics applications. Mn1-xGax thin films with the L10 (or CuAu type) crystal structure (referred to as MnGa), which show strong perpendicular magnetic anisotropy (PMA), were successfully grown by molecular beam epitaxy (MBE) in the early 1990s. Recently, spintronic device structures using MnGa layers have been studied, such as magnetic tunnel junctions and spin-orbit torque devices. To understand the properties of MaGa and the heterostructures using MnGa, it is important to characterize the electronic properties of MnGa. In this study, we have performed angle-resolved photoemission spectroscopy (ARPES) with vacuum ultra-violet light on a L10 MnGa thin film with PMA to elucidate the electronic states.
The in-plane Fermi surface mapping demonstrates a diamond-like Fermi surface (FS) in the kx-ky (the [100] and [010] directions) plane. The large area of FS is consistent with the metallic nature of MnGa. This FS was likely independent of photon energy, indicating that the FS originates from two-dimensional (2D) bands. In contrast, the bulk band dispersion below the Fermi level changes with kz. Since MnGa has the three-dimensional L10 crystal structure, the observed 2D electronic state is expected to come from surface states. To the authors’ knowledge, this is the first observation of the band dispersion in a MnGa film with the clean surface using ARPES.
The in-plane Fermi surface mapping demonstrates a diamond-like Fermi surface (FS) in the kx-ky (the [100] and [010] directions) plane. The large area of FS is consistent with the metallic nature of MnGa. This FS was likely independent of photon energy, indicating that the FS originates from two-dimensional (2D) bands. In contrast, the bulk band dispersion below the Fermi level changes with kz. Since MnGa has the three-dimensional L10 crystal structure, the observed 2D electronic state is expected to come from surface states. To the authors’ knowledge, this is the first observation of the band dispersion in a MnGa film with the clean surface using ARPES.