[22a-P08-1~11] 8 Plasma Electronics(Poster)

[22a-P08-6] Measurement of Gas-Flow Rate Dependence of Incident Radicals and Ions on to the Substrate in Tetramethylsilane Plasma for Si-containing DLC films

〇Koichi Ishii¹, Shun Sasaki¹, Mao Kamiyama¹, Akinori Oda¹, Yoshiaki Watanabe², Hiroyuki Kousaka³, Takayuki Ohta⁴ (1.Chiba Inst., 2.Innovation Science Co. Ltd., 3.Gifu Univ., 4.Meijo Univ.)

Keywords:Diamond-Like Carbon, Plasma-Enhanced CVD, Tetramethylsilane

Si-containing DLC (Diamond-Like Carbon) films are used for automotive sliding parts, etc., because the coefficient of friction is lower than that of ordinary DLC films. Plasma-assisted CVD using tetramethylsilane (TMS) gas is mainly used for this deposition. It has been reported that the Si content in the film increases with increasing the gas flow rate. In this study, we measured the amount of radicals and ions incident on the electrodes of TMS plasma diluted with He gas, and report the results.