2021年第82回応用物理学会秋季学術講演会

講演情報

一般セッション(ポスター講演)

10 スピントロニクス・マグネティクス » 10 スピントロニクス・マグネティクス(ポスター)

[22a-P09-1~14] 10 スピントロニクス・マグネティクス(ポスター)

2021年9月22日(水) 11:00 〜 12:40 P09 (ポスター)

11:00 〜 12:40

[22a-P09-4] The structural and magnetic properties of an ultra-thin MnGa/Fe bilayer deposited on GaAs substrate

Shun Hasebe1、Takuya Hara1、Michihiko Yamanouchi1、Tetsuya Uemura1 (1.Grad. school of IST, Hokkaido Univ.)

キーワード:spintronics, perpendicular magnetic anisotropy, MnGa

Perpendicularly magnetized MnGa is a promising spin source for spin injection into GaAs because it has relatively large magnetic anisotoropy (PMA), high spin polarization, and small lattice mismatch to GaAs. However, some thermal treatments are indispensable for MnGa directly grown on GaAs to obtain clear PMA characteristics, which may prevent spin injection due to atomic diffusion at MnGa/GaAs interface. Thus, a buffer layer which enables the low-temperature growth of MnGa is required. In this study, we deposited a MnGa film on GaAs with and without Fe insertion layer, and then evaluated the structural and magnetic properties by the RHEED observations and the MOKE measurement. As a result, we achieved a clear PMA characteristics in MnGa grown at room temperature by introducing an ultrathin Fe layer between GaAs and MnGa.