[23a-P03-1~4] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[23a-P03-1] A study on the development of nanoscale device simulation method based on the use of gate-type quantum computer algorithm

〇Shingo Matsuo¹, Takuya Ishibashi¹, Satofumi Souma¹ (1.Kobe Univ.)

Keywords:semiconductor, quantum computing algorithm, nanoscale device simulation