[23a-P03-1~4] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[23a-P03-4] Chemical etching of silicon assisted by patterned graphene oxide in the vapor phase

〇Wataru Kubota¹, Toru Utsunomiya¹, Takashi Ichii¹, Hiroyuki Sugimura¹ (1.Kyoto Univ.)

Keywords:silicon etching, graphene oxide, catalyst

Chemical etching of silicon assisted by several types of catalysts such as noble metals or carbon materials in the solution process is drawing much attention to the fabrication of silicon micro-nano structures. Recently, assisted-etching of silicon in the vapor phase has been in the limelight. Vapor-phase assisted etching can solve some problems that assisted etching in solution have, for example, desorption of catalysts due to convection of the solution and gases such as hydrogen generated during the reaction, and porousness of the uncoated part of the catalyst. We have reported that Graphene oxide enhances the etching reaction in the vapor phase. In this presentation, we conducted pattern etching of silicon by utilizing the GO micro pattern fabricated by the photo process.