[23a-P05-1~2] 13.3 Insulator technology

[23a-P05-2] Determination of the charge centroids of electrons and holes trapped in the charge trap layer of MONOS-type nonvolatile memory elements

〇Akari Matsumoto¹, Yuta Nishigaki¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

Keywords:silicon nitride, nonvolatile memory