The 82nd JSAP Autumn Meeting 2021

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

[23a-P05-1~2] 13.3 Insulator technology

Thu. Sep 23, 2021 9:00 AM - 10:40 AM P05 (Poster)

9:00 AM - 10:40 AM

[23a-P05-1] Dependence of penetration barrier of alkaline earth metal ions into SiNx and SiOx films on ion radius

Tomoki Oku1, Masahiro Totsuka1, Hajime Sasaki1 (1.Mitsubishi Electric)

Keywords:moisture resistance, Contamination, passivation film

In order to analyze the effect of ions on the deterioration of the moisture resistance of the protective film, in addition to the alkali metal ions (Li +, Na +, K +, Rb +) on the SiNx and SiOx films that have defects so far, alkaline earth metals (Be2+ , Mg2+, Ca2+, Sr2+), molecular orbital calculation was applied to find the penetration barrier. When the relationship between the generated energy at the vacancy site and the ionic radius was investigated, it was found that the differences depending on the period were similar.