[23a-P10-1~14] 13.7 Compound and power devices, process technology and characterization

[23a-P10-14] Circuit modeling of parasitic elements by measuring radiated emission in GaN-WPT circuit

〇Toshihide Ide^1,2, Mitsuaki Shimizu¹, Noriyuki Takada² (1.NU-AIST GaN-OIL, 2.AIST RIAEP)

Keywords:GaN-WPT, Parasitic Elements, Circuit Modeling