[23a-P10-1~14] 13.7 Compound and power devices, process technology and characterization

[23a-P10-7] Characterization of gamma-irradiated 4H-SiC JFETs by illumination of sub-bandgap light

〇Akinori Takeyama¹, Takahiro Makino¹, Takeshi Ohshima¹, Shin-Ichiro Kuroki², Yasunori Tanaka³ (1.QST, 2.Hiroshima Univ., 3.AIST)

Keywords:Silicon Carbide, radiation, FET