The 82nd JSAP Autumn Meeting 2021

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[23a-P10-1~14] 13.7 Compound and power devices, process technology and characterization

Thu. Sep 23, 2021 11:00 AM - 12:40 PM P10 (Poster)

11:00 AM - 12:40 PM

[23a-P10-7] Characterization of gamma-irradiated 4H-SiC JFETs by illumination of sub-bandgap light

Akinori Takeyama1, Takahiro Makino1, Takeshi Ohshima1, Shin-Ichiro Kuroki2, Yasunori Tanaka3 (1.QST, 2.Hiroshima Univ., 3.AIST)

Keywords:Silicon Carbide, radiation, FET