The 82nd JSAP Autumn Meeting 2021

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[23a-P10-1~14] 13.7 Compound and power devices, process technology and characterization

Thu. Sep 23, 2021 11:00 AM - 12:40 PM P10 (Poster)

11:00 AM - 12:40 PM

[23a-P10-6] High-Temperature Reliability at 400℃ of Integrated Electronic Circuit Based on 4H-SiC MOSFET with TiN Metal Gate

Cuong Van Vuong1, Tetsuya Meguro1, Shin-Ichiro Kuroki1 (1.RNBS, Hiroshima Uni.)

Keywords:4H-SiC MOSFET, High temperature, Amplifier

In this research, the high-temperature reliability of single stage amplifier based on 4H-SiC MOSFET with TiN metal gate was investigated. After 100-hour aging at 400℃ in nitrogen ambient, the good characteristics of ID-VG and ID-VDS curves indicated that the 4H-SiC MOSFET remained stable during the aging process. Whereas, the stability of the output signal of the amplifier after being aged for 100 hours showed that the 4H-SiC MOSFET with TiN metal gate could be a potential candidate to apply for integrated electronic circuit for harsh environment applications.