The 82nd JSAP Autumn Meeting 2021

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[23a-P10-1~14] 13.7 Compound and power devices, process technology and characterization

Thu. Sep 23, 2021 11:00 AM - 12:40 PM P10 (Poster)

11:00 AM - 12:40 PM

[23a-P10-5] Study of Si-SOI/SiO2/4H-SiC direct wafer bonding

〇(M2)Kazuya Kawamura1, Tatsuya Meguro1, Masayuki Tsutsumi1, Takeshi Ohshima2, Yasunori Tanaka3, Shin-Ichiro Kuroki1 (1.RNBS, Hiroshima Univ., 2.QST, 3.AIST)

Keywords:semiconductor, direct wafer bonding

本研究ではSiCとSiの利点を併せ持つハイブリッドデバイスの開発に向けたSi-SiC基板の直接接合に着目し、熱酸化膜を接合界面に挟んだSi-SOI/SiO2/4H-SiCの接合条件最適化を行ったのでこれを報告する。