[23a-P10-1~14] 13.7 Compound and power devices, process technology and characterization

[23a-P10-9] Characterization of plasma-induced defects in GaN by the reverse bias annealing

〇(M2)Katsutoshi Mae¹, Akari Yamaya¹, Seiji Nakamura¹ (1.Tokyo Metropolitan Univ.)

Keywords:plasma-induced defects, GaN