The 82nd JSAP Autumn Meeting 2021

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[23a-P10-1~14] 13.7 Compound and power devices, process technology and characterization

Thu. Sep 23, 2021 11:00 AM - 12:40 PM P10 (Poster)

11:00 AM - 12:40 PM

[23a-P10-9] Characterization of plasma-induced defects in GaN by the reverse bias annealing

〇(M2)Katsutoshi Mae1, Akari Yamaya1, Seiji Nakamura1 (1.Tokyo Metropolitan Univ.)

Keywords:plasma-induced defects, GaN