13:00 〜 14:40
▲ [23p-P06-1] Post-growth annealing of Stacked Submonolayer (SML) InAs Nanostructures
キーワード：submonolayer, nanostructures, 2D to 3D transition
Stacked submonolayer (SML) growth of InAs nanostructures by MBE has been gaining interest recently for various optoelectronic applications, as an alternative to the well-known Stranski-Krastanov (SK) growth. In contrast to SK growth, stacked SML growth involves the cycled deposition of SML-thick InAs and few ML-thick GaAs. We have recently reported the existence of a 2D to 3D transition in SML nanostructures, which leads to the formation of two distinct types of SML nanostructures: 2D islands and 3D structures. Compared to the analogous transition in SK growth, the properties of the stacked SML transition is not yet well investigated. Hence, this study aims to investigate the influence of post-growth annealing (PGA) on the 2D to 3D transition in SML nanostructures. In the case of SK nanostructures, it has been reported that PGA can spontaneously induce a transition to 3D growth from subcritical-thick wetting layers. Results demonstrate that PGA can lead to a significant increase in the 3D structure density, and that the 2D to 3D transition can take up to several minutes to fully complete.