[23p-P07-1~16] 15.4 III-V-group nitride crystals

[23p-P07-8] Characterization of GaInN multi-layer grown on strain-controlled layer by RF-MBE

〇Masaki Matsuda¹, Ryosuke Yoshida¹, Kaigo Tahara¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹ (1.Kogakuin Univ.)

Keywords:GaInN

In high-In composition GaInN, the QCSE caused by the piezoelectric field in the strained quantum wells reduces the luminous efficiency. Therefore, the QCSE can be reduced by using a buffer layer whose lattice constant is close to that of the GaInN periodic structure as the underlying layer (UL) and by matching the lattice constant of the barrier layer to that of the UL. In this study, a GaInN UL was inserted as a relaxation control layer to reduce the QCSE, and the periodic structure was grown by MBE and compared that with a GaN UL. XRD θ-2θ, XRD RSM measurements, and PL measurements were carried out.