11:00 〜 11:15 ▼ [18a-Z13-6] Improved Uniformity and Breakdown Strength of Schottky Barrier Diodes Fabricated on Diamond Heteroepitaxial Substrates 〇(D)PHONGSAPHAK Sittimart1,2、Shinya Ohmagari1、Tsuyoshi Yoshitake2 (1.AIST、2.Kyushu Univ.)