Kosuke Ota

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Speaker, Author, Co-Author

Thu. Mar 18, 2021 9:30 AM - 12:30 PM Z13 (Z13)

Oral presentation
| 6 Thin Films and Surfaces
| 6.2 Carbon-based thin films

[18a-Z13-1~11] 6.2 Carbon-based thin films

11:45 AM - 12:00 PM

△ [18a-Z13-9] Achievement of High Breakdown Voltage (>580 V)
in Vertical-Type 2DHG Diamond MOSFET by p^--drift layer

〇(B)Kosuke Ota¹, Jun Tsunoda¹, Naoya Niikura¹, Aoi Morishita¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Kagami Memorial Research Institute for Materials Science and Technology.)