Hidetoshi Mizobata

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Speaker, Author, Co-Author

Tue. Mar 16, 2021 9:00 AM - 12:00 PM Z16 (Z16)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[16a-Z16-1~11] 13.7 Compound and power electron devices and process technology

10:00 AM - 10:15 AM

[16a-Z16-5] Electrical Properties of SiO₂/GaN MOS Capacitors Fabricated on GaN(0001) Substrates

Kazuki Tomigahara¹, Yuhei Wada¹, 〇Hidetoshi Mizobata¹, Mikito Nozaki¹, Akitaka Yoshigoe², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.JAEA)

10:15 AM - 10:30 AM

△ [16a-Z16-6] Investigation of Post-Deposition Annealing Conditions for Improving Interface Property of SiO₂/GaN MOS Devices

〇Hidetoshi Mizobata¹, Yuhei Wada¹, Mikito Nozaki¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

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