Atsuo Hirano

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Speaker, Author, Co-Author

Thu. Mar 18, 2021 9:00 AM - 12:00 PM Z05 (Z05)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[18a-Z05-1~11] 15.6 Group IV Compound Semiconductors (SiC)

9:15 AM - 9:30 AM

[18a-Z05-2] Influence of steps in the surface on Contraction of Basal Plane Partial Dislocations in 4H-SiC

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo)