Fumihiro Fujie

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Speaker, Author, Co-Author

Thu. Mar 18, 2021 9:00 AM - 12:00 PM Z05 (Z05)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[18a-Z05-1~11] 15.6 Group IV Compound Semiconductors (SiC)

9:30 AM - 9:45 AM

△ [18a-Z05-3] Depth estimation of basal plane dislocations in SiC by synchrotron X-ray topography

〇Fumihiro Fujie¹, Hongyu Peng², Tuerxun Ailihumaer², Balaji Raghothamachar², Michael Dudley², Shunta Harada¹, Miho Tagawa¹, Toru Ujihara^1,3 (1.Nagoya Univ., 2.Stony Brook Univ., 3.AIST GaN-OIL)

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