Haruka Yokoyama

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Speaker, Author, Co-Author

Thu. Mar 18, 2021 9:00 AM - 11:30 AM Z27 (Z27)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[18a-Z27-1~9] 15.4 III-V-group nitride crystals

9:45 AM - 10:00 AM

[18a-Z27-4] Changes in the lattice relaxation process for the number of Si layer inserted at the initial stage of GaInN growth on GaN

〇(M1)Haruka Yokoyama¹, Tomohiro Yamaguchi¹, Takuo Sasaki², Soichiro Ohno¹, Takanori Kiguchi³, Hiroki Hirukawa¹, Seiji Fujikawa², Masamitu Takahasi², Takeyoshi Onuma¹, Tohru Honda¹ (1.Kogakuin Univ., 2.QST, 3.Tohoku Univ.)

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