Kohei Aoyama

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Speaker, Author, Co-Author

Thu. Mar 18, 2021 9:00 AM - 11:30 AM Z27 (Z27)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[18a-Z27-1~9] 15.4 III-V-group nitride crystals

11:15 AM - 11:30 AM

[18a-Z27-9] Characterization of Schottky barrier height for metal/lightly p-type doped GaN interface on vertical SBDs

〇Kohei Aoyama¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka¹ (1.Institute of Industrial Science, The University of Tokyo)