Takuya Maeda

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Speaker, Author, Co-Author

Fri. Mar 19, 2021 9:30 AM - 11:45 AM Z25 (Z25)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19a-Z25-1~8] 13.7 Compound and power electron devices and process technology

9:30 AM - 9:45 AM

[19a-Z25-1] Temperature dependence of impact ionization coefficients of electrons and holes in GaN

〇Takuya Maeda¹, Tetsuo Narita², Shinji Yamada^3,4, Tetsu Kachi³, Tsunenobu Kimoto¹, Masahiro Horita^1,3,5, Jun Suda^1,3,5 (1.Kyoto Univ., 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ. IMaSS, 4.ULVAC AIT, 5.Nagoya Univ.)

9:45 AM - 10:00 AM

[19a-Z25-2] Electrical characterization of GaN/ScAlN/GaN heterostructure barrier diodes

〇Takuya Maeda¹, Joseph Casamento¹, Kazuki Nomoto¹, Huili Grace Xing¹, Debdeep Jena¹ (1.Cornell University)

Thu. Mar 18, 2021 1:00 PM - 6:00 PM Z33 (Z33)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-Z33-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:45 PM - 6:00 PM

[18p-Z33-17] Nearly Ideal Thermionic Emission and Thermionic Field Emission in α-Ga₂O₃ Schottky Barrier Diodes Grown on Sapphire Substrate by Mist-CVD

〇Takuya Maeda¹, Mitsuru Okigawa², Yuji Kato², Isao Takahashi², Takashi Shinohe² (1.Kyoto Univ., 2.FLOSFIA Inc.)

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