Hidemasa Takahashi

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Speaker, Author, Co-Author

Fri. Mar 19, 2021 9:30 AM - 11:45 AM Z25 (Z25)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19a-Z25-1~8] 13.7 Compound and power electron devices and process technology

11:30 AM - 11:45 AM

[19a-Z25-8] Electrical Characteristics of Gated-Anode Diodes using GaN HEMT with Recessed Gate Structure

〇Hidemasa Takahashi¹, Yuji Ando¹, Momoe Shojima³, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Institute of Technology)

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