9:15 AM - 9:30 AM
▲ [19a-Z31-2] Top-gate monolayer MoS2 MOSFETs with ZrO2 gate dielectrics formed by low temperature ALD
〇WENHSIN CHANG1, Naoya Okada1, Masayo Horikawa1, Takahiko Endo2, Yasumitsu Miyata2, Toshifumi Irisawa1 (1.AIST, 2.TMU)
Fri. Mar 19, 2021 9:00 AM - 12:00 PM Z31 (Z31)
9:15 AM - 9:30 AM
〇WENHSIN CHANG1, Naoya Okada1, Masayo Horikawa1, Takahiko Endo2, Yasumitsu Miyata2, Toshifumi Irisawa1 (1.AIST, 2.TMU)