Atsushi Hiraiwa

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Speaker, Author, Co-Author

Fri. Mar 19, 2021 9:00 AM - 12:15 PM Z33 (Z33)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-Z33-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:15 AM - 10:30 AM

[19a-Z33-6] Post-deposition annealing effect on ALD-Al₂O₃ formed on (001) β-Ga₂O₃

〇Atsushi Hiraiwa^1,4, Kiyotaka Horikawa², Hiroshi Kawarada^1,2,3, Motohisa Kado⁵, Katsunori Danno⁵ (1.RONLI, Waseda Univ., 2.FSE, Waseda Univ., 3.KMLMST, Waseda Univ., 4.IMaSS, Nagoya Univ., 5.Toyota Motor Corp.)