Sayleap Sdoeung

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Speaker, Author, Co-Author

Fri. Mar 19, 2021 9:00 AM - 12:15 PM Z33 (Z33)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-Z33-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:45 AM - 11:00 AM

▼ [19a-Z33-7] Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga₂O₃ SBDs Identified by High Sensitive Emission Microscope

〇(D)Sayleap Sdoeung¹, Kohei Sasaki², Katsumi Kawasaki³, Jun Hirabayashi³, Akito Kuramata², Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Technology, 3.TDK)