5:00 PM - 5:50 PM [19p-P06-2] Effects of forming gas annealing on electrical properties of Pt/ALD-Al2O3/AlGaN/GaN MIS-HEMTsⅢ 〇Toshiharu Kubo1, Nobuki Yoshida1, Takashi Egawa1 (1.Nagoya Inst. of Tech.)