Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[16a-Z23-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Mar 16, 2021 9:00 AM - 12:00 PM Z23 (Z23)

Haruhiko Udono(Ibaraki Univ.), Kenji Yamaguchi(QST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[16a-Z23-1] Investigation of the effect of substrate temperature on the characteristics of
BaSi₂ films on glass substrates formed by RF sputtering

〇Ryota Koitabashi¹, Taira Nemoto¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh Corporation)

9:15 AM - 9:30 AM

[16a-Z23-2] Characterizations of B-doped BaSi₂ films formed by sputtering

〇Hayato Hasebe¹, Taira Nemoto¹, Ryota Koitabashi¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh Corporation)

9:30 AM - 9:45 AM

[16a-Z23-3] High Refractive Index and Low Extinction Coefficient in Infrared Spectrum of Polycrystalline β-FeSi₂ Thin Film Prepared by Co-sputtering

〇(M2)Xuanwei Zhang¹, Kyoko Namura¹, Motofumi Suzuki¹ (1.Kyoto Univ.)

9:45 AM - 10:00 AM

[16a-Z23-4] Growth of β-Fe_1-xRu_xSi₂ polycrystalline thin films and their PL properties

〇(B)Ren Yoshihara¹, Hiroki Nishi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech)

10:00 AM - 10:15 AM

[16a-Z23-5] Application of mechanochemical effects to close-spaced evaporation of BaSi₂

〇Kosuke Hara¹, Chiaya Yamamoto², Junji Yamanaka², Keisuke Arimoto¹ (1.CCST, Univ. of Yamanashi, 2.CIA, Univ. of Yamanashi)

10:15 AM - 10:30 AM

△ [16a-Z23-6] Photoresponsivity enhancement of H passivated As-doped n-BaSi₂ films and its mechanisms by ab initio studies

〇Sho Aonuki¹, Yudai Yamashita¹, Zhihao Xu¹, Kazuhiro Gotoh², Kaoru Toko¹, Noritaka Usami², Dmitri Migas³, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Nagoya Univ., 3.Beralusian State Univ. Info. Radio.)

10:45 AM - 11:00 AM

[16a-Z23-7] Effect of post annealing on photoresponsivity of B-doped p-BaSi₂ films

〇Shunsuke Narita¹, Yudai Yamashita¹, Sho Aonuki¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

11:00 AM - 11:15 AM

[16a-Z23-8] Effect of in situ annealing on BaSi₂ evaporated films with low deposition rate

〇Souma Nishio¹, Shunnosuke Mori¹, Katsushi Nishino¹ (1.Tokushima Univ.)

11:15 AM - 11:30 AM

[16a-Z23-9] Evaluation of thermoelectric properties of B-doped BaSi₂ films grown by MBE

〇Ryuichi Yoshida¹, Mikie Tsuji¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

11:30 AM - 11:45 AM

[16a-Z23-10] Phase relationship of Sr-Si system around Si concentration of 66.7 at. %

〇Motoharu Imai¹ (1.NIMS)

11:45 AM - 12:00 PM

[16a-Z23-11] Bulk moduli and bulk thermal expansion coefficients of silicides

〇Motoharu Imai¹, Takanobu Hiroto¹ (1.NIMS)

Session information

[16a-Z23-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

[16a-Z23-1] Investigation of the effect of substrate temperature on the characteristics of
BaSi₂ films on glass substrates formed by RF sputtering

[16a-Z23-2] Characterizations of B-doped BaSi₂ films formed by sputtering

[16a-Z23-3] High Refractive Index and Low Extinction Coefficient in Infrared Spectrum of Polycrystalline β-FeSi₂ Thin Film Prepared by Co-sputtering

[16a-Z23-4] Growth of β-Fe_1-xRu_xSi₂ polycrystalline thin films and their PL properties

[16a-Z23-5] Application of mechanochemical effects to close-spaced evaporation of BaSi₂

△ [16a-Z23-6] Photoresponsivity enhancement of H passivated As-doped n-BaSi₂ films and its mechanisms by ab initio studies

[16a-Z23-7] Effect of post annealing on photoresponsivity of B-doped p-BaSi₂ films

[16a-Z23-8] Effect of in situ annealing on BaSi₂ evaporated films with low deposition rate

[16a-Z23-9] Evaluation of thermoelectric properties of B-doped BaSi₂ films grown by MBE

[16a-Z23-10] Phase relationship of Sr-Si system around Si concentration of 66.7 at. %

[16a-Z23-11] Bulk moduli and bulk thermal expansion coefficients of silicides

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Session information

[16a-Z23-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

△ [16a-Z23-6] Photoresponsivity enhancement of H passivated As-doped n-BaSi2 films and its mechanisms by ab initio studies

Authenticate

△ [16a-Z23-6] Photoresponsivity enhancement of H passivated As-doped n-BaSi₂ films and its mechanisms by ab initio studies