[16a-Z33-1~10] 6.3 Oxide electronics

Tue. Mar 16, 2021 9:00 AM - 12:00 PM Z33 (Z33)

Hisashi Shima(AIST), Atsushi Fukuchi(Hokkaido Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:30 AM

[16a-Z33-1] [The 5th Thin Film and Surface Physics Division Paper Award Speech] Carrier Sources and Conduction Mechanisms of Sputtered SnO_x thin films

〇Junjun Jia¹, Takumi Sugane², Shin-ichi Nakamura², Toshihiko Okajima³, Yuzo Shigesato² (1.GCSE, Waseda Univ. GCSE, 2.Aoyama Gakuin Univ., 3.Aichi Synchrotron Radiation Center)

9:30 AM - 9:45 AM

[16a-Z33-2] Grain size control for sensitivity improvement of flexible visible-light-transparent CO₂ sensor using SnO₂ thin film

〇Yuta Arai¹, Tomohiro Hamada¹, Joonam Kim^1,2, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

9:45 AM - 10:00 AM

[16a-Z33-3] Effect of Post Annealing on ITO Thin Films Deposited at Low Temperature by Sputtering with Argon/Hydrogen Gas mixtures

〇Tokumo Kuze¹, Takanori Shinozaki², Masao Isomura^1,2 (1.Tokai Univ, 2.Graduate School of Eng)

10:00 AM - 10:15 AM

[16a-Z33-4] Effect of vacuum ultraviolet light (172 nm) irradiation on conductivity of PLD grown NiO thin films

〇(M1)Kenta Kaneko¹, Yoshiharu Shinozaki¹, Satoru Kaneko^2,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech, 2.KISTEC)

10:15 AM - 10:30 AM

[16a-Z33-5] Fabrication of nanogap using adhesion lithography and application to planar type TaO_x resistive switching memory

〇Daiki Tateishi¹, Takahiko Ban¹, Shinichi Yamamoto¹ (1.Ryukoku Univ.)

10:45 AM - 11:00 AM

[16a-Z33-6] Characterization of resistive switching device using HfO₂ thin film by solution coating method

〇Ryota Matsumura¹, Takahiko Ban¹, Shinichi Yamamoto¹ (1.Ryukoku Univ.)

11:00 AM - 11:15 AM

[16a-Z33-7] In-situ TEM of Cu movement in MoO_x/Al₂O₃ double layer CBRAM

〇Masashi Arita¹, Ryusuke Ishikawa¹, Atsushi Tsurumaki-Fukuchi¹, Yasuo Takahashi¹ (1.Hokkaido Univ.)

11:15 AM - 11:30 AM

[16a-Z33-8] Evaluation of Electronic States of Resistive Random Access Memory Using Low-Frequency-Noise Spectroscopy

〇(M1)Kota Sugawara^1,2, Hiroshi Suga^1,2, Yasuhisa Naitoh¹, Hisashi Shima¹, Hiroyuki Akinaga¹ (1.AIST, 2.CIT)

11:30 AM - 11:45 AM

[16a-Z33-9] The effect of probe contact on basic memory characteristics in Pt/Nb:STO resistive memories

〇(M1)Yuta Hashimoto¹, Hiromasa Aoki¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci.)

11:45 AM - 12:00 PM

[16a-Z33-10] Formation of BiVO₄ thin films and evaluation of photocatalytic response by visible light

〇Tomoki Konishi¹, Shinichi Yamamoto¹, Takahiko Ban¹ (1.Ryukoku Univ.)

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