[17a-Z27-1~9] 15.4 III-V-group nitride crystals

Wed. Mar 17, 2021 9:00 AM - 11:30 AM Z27 (Z27)

Narihito Okada(Yamaguchi Univ.), Masayuki Imanishi(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[17a-Z27-1] High quality semipolar (10-13) AlN hetero-epitaxial growth by ammonia-free high-temperature MOVPE (AFHT-MOVPE)

〇Xu-Qiang Shen¹, Kazutoshi Kojima¹ (1.AIST)

9:15 AM - 9:30 AM

△ [17a-Z27-2] InGaN growth on SCAMO substrate via Tri-Halide Vapor Phase Epitaxy

〇Iori Kobayashi¹, Kentaro Ema¹, Ryohei Hieda¹, Hisashi Murakami¹, Akinori Koukitu¹ (1.Tokyo Univ. of Agriculture and Tech.)

9:30 AM - 9:45 AM

△ [17a-Z27-3] Electrical and structural properties of p-type GaN layers fabricated by HVPE

〇(D)Kazuki Ohnishi¹, Yuki Amano¹, Naoki Fujimoto², Shugo Nitta², Hirotaka Watanabe², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Elec., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

9:45 AM - 10:00 AM

[17a-Z27-4] Correlation Between MPPL and Raman Mapping Images of Threading Dislocations in GaN

〇Tomoyuki Tanikawa¹, Mariko Adachi², Rikuto Terada¹, Mayuko Tsukakoshi¹, Masahiro Uemukai¹, Ryuji Katayama¹ (1.Osaka Univ., 2.Nanophoton)

10:15 AM - 10:30 AM

[17a-Z27-5] Origin of black color in OVPE-GaN (heavily O-doped GaN) crystals

〇Tomoaki Sumi¹, Junichi Takino¹, Yoshio Okayama¹, Akira Kitamoto², Shigeyoshi Usami², Masayuki Imanishi², Yusuke Mori² (1.Panasonic Corp., 2.Osaka Univ.)

10:30 AM - 10:45 AM

[17a-Z27-6] Structure analysis of OVPE-grown GaN crystals by using nanobeam X-ray diffraction

Jun Kuritani¹, Tetsuya Tohei¹, Takeaki Hamachi¹, 〇Yusuke Hayashi¹, Junichi Takino², Tomoaki Sumi², Shigeyoshi Usami³, Masayuki Imanishi³, Yusuke Mori³, Kazushi Sumitani⁴, Yasuhiko Imai⁴, Shigeru Kimura⁴, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.Panasonic, 3.Grad. Sch. Eng., Osaka Univ., 4.JASRI)

10:45 AM - 11:00 AM

[17a-Z27-7] Growth of GaN Single Crystals with Low Dislocation Density using Flux-Film-Coated Na flux method.

〇Fumio Kawamura¹, Yelim Song¹ (1.NIMS)

11:00 AM - 11:15 AM

▼ [17a-Z27-8] Analysis of Stress and Impurity Evolution Related to Growth Sector in Na-flux GaN by Nanobeam X-ray Diffraction

〇(M2)Zhendong WU¹, Takeaki Hamachi¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Masayuki Imanishi², Yusuke Mori², Kazushi Sumitani³, Yasuhiko Imai³, Shigeru Kimura³, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.Grad. Sch. Eng., Osaka Univ., 3.JASRI)

11:15 AM - 11:30 AM

[17a-Z27-9] The effect of metallic elements for Gallium Nitride crystal growth under a normal pressure nitrogen atmosphere

〇Shinya Akiyama¹, Kazuhiro Yagihashi¹, Yoshimi Takahashi¹, Hiroshi Hasegawa¹, Kazuya Hayashibe¹, Kazumasa Sugiyama² (1.Dexerials Corp, 2.Tohoku Univ. IMR)

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