[17p-P02-1~8] 3.13 Semiconductor optical devices

Wed. Mar 17, 2021 1:00 PM - 1:50 PM P02 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:50 PM

[17p-P02-1] Lasing characteristics of MQW lasers with surface electrode structure on wafer directly bonded InP/SiO₂/Si substrates

〇Xu Han¹, Koki Tsushima¹, Takahiro Ishizaki¹, Takuto Shirai¹, Motonari Sato¹, Kota Shibukawa¹, Shingo Ito¹, Koji Agata¹, Momoko Kotani¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

1:00 PM - 1:50 PM

[17p-P02-2] Strain dependence of GaInAsP / GaInAsP MQW laser diode on wafer bonded InP/Si substrate

〇(B)Kouji Agata¹, Takahiro Ishizaki¹, Xu Han¹, Koki Tsushima¹, Shirai Takuto¹, Sato Motonari¹, Kota shibukawa¹, shingo Ito¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

1:00 PM - 1:50 PM

[17p-P02-3] Electric field distribution of MQW laser on directly bonded InP/SiO₂/Si substrate

〇Shingo Ito¹, Hann Xu¹, Kota Shibukawa¹, Koki Tsushima¹, Takahiro Ishizaki¹, Takuto Shirai¹, Motonari Sato¹, Koji Agata¹, Momoko Kotani¹, Kazuhiko Shimomura¹ (1.Sophia University)

1:00 PM - 1:50 PM

[17p-P02-4] Development and evaluation of swept-source OCT using the tunable laser based on 1.1-μm-waveband InAs quantum dots

〇Toshiya Tsuji¹, Nobuhiko Ozaki¹, Eiichiro Watanabe², Hirotaka Ohsato², Naoki Ikeda², Yoshimasa Sugimoto², D. T. D. Childs³, R. A. Hogg³ (1.Wakayama Univ., 2.NIMS, 3.Univ. Glasgow)

1:00 PM - 1:50 PM

[17p-P02-5] Quantum dot size dependence of the photoexcited carrier dynamics in PbS quantum dot film

〇Naoki Oguri¹, Ryouta Asakura¹, Chao Ding¹, Syuji Hayase¹, Taro Toyoda¹, Qing Shen¹ (1.Univ. Electro-commun.)

1:00 PM - 1:50 PM

[17p-P02-6] Fabrication of Monolithic Blue m-LED pixels and Study for Full-color System

〇(M1C)Hiroyoshi Chikui¹, Syoma Takeda¹, Takeyoshi Onuma¹, Tomohiro Yamaguchi¹, Tohru Honda¹ (1.Kogakuin Univ.)

1:00 PM - 1:50 PM

[17p-P02-7] Calculating Diffraction Loss Maps for a Gain-Guided Optical Micro-Cavity

〇Chikako Kurokawa¹, Yuta Suzuki¹, Yuma Kitagawa¹, Shin-ichiro Tezuka¹ (1.Yokogawa Electric Corp.)

1:00 PM - 1:50 PM

▲ [17p-P02-8] Design and simulation of 1μm Al-free quantum-well SOA

〇(M2)Theophile Seijiro Mascia¹, Yoshiaki Nakano¹ (1.Univ. of Tokyo)

Session information

[17p-P02-1~8] 3.13 Semiconductor optical devices

[17p-P02-1] Lasing characteristics of MQW lasers with surface electrode structure on wafer directly bonded InP/SiO₂/Si substrates

[17p-P02-2] Strain dependence of GaInAsP / GaInAsP MQW laser diode on wafer bonded InP/Si substrate

[17p-P02-3] Electric field distribution of MQW laser on directly bonded InP/SiO₂/Si substrate

[17p-P02-4] Development and evaluation of swept-source OCT using the tunable laser based on 1.1-μm-waveband InAs quantum dots

[17p-P02-5] Quantum dot size dependence of the photoexcited carrier dynamics in PbS quantum dot film

[17p-P02-6] Fabrication of Monolithic Blue m-LED pixels and Study for Full-color System

[17p-P02-7] Calculating Diffraction Loss Maps for a Gain-Guided Optical Micro-Cavity

▲ [17p-P02-8] Design and simulation of 1μm Al-free quantum-well SOA

Authenticate

Session information

[17p-P02-1~8] 3.13 Semiconductor optical devices

[17p-P02-1] Lasing characteristics of MQW lasers with surface electrode structure on wafer directly bonded InP/SiO2/Si substrates

[17p-P02-2] Strain dependence of GaInAsP / GaInAsP MQW laser diode on wafer bonded InP/Si substrate

[17p-P02-3] Electric field distribution of MQW laser on directly bonded InP/SiO2/Si substrate

[17p-P02-4] Development and evaluation of swept-source OCT using the tunable laser based on 1.1-μm-waveband InAs quantum dots

[17p-P02-5] Quantum dot size dependence of the photoexcited carrier dynamics in PbS quantum dot film

[17p-P02-6] Fabrication of Monolithic Blue m-LED pixels and Study for Full-color System

[17p-P02-7] Calculating Diffraction Loss Maps for a Gain-Guided Optical Micro-Cavity

▲ [17p-P02-8] Design and simulation of 1μm Al-free quantum-well SOA

Authenticate

[17p-P02-1] Lasing characteristics of MQW lasers with surface electrode structure on wafer directly bonded InP/SiO₂/Si substrates

[17p-P02-3] Electric field distribution of MQW laser on directly bonded InP/SiO₂/Si substrate